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MITSUBISHI SEMICONDUCTOR
Technical Note
Specifications are subject to change without notice.
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
DESCRIPTION
The MGF7170AC is a monolithic microwave integrated circuit for use in CDMA base handheld phone.
PIN CONFIGURATION (TOP VIEW)
Pi GND Vd1 Ext Vg GND Po / Vd2
FEATURES -Low voltage operation :
Vd=3.0V -High output power : Po=28dBm typ. @f=1.715~1.78GHz -Low distortion : ACP=-46dBc max. @Po=28dBm -High efficiency : Id=520mA typ. @Po=28dBm -Small size : 7.0 x 6.1 x 1.1 mm Single voltage operation (NVG include) Surface mount package 2 Stage Amplifier External matching circuit is required
GND
APPLICATION
1.9GHz band handheld phone
Pi : RF input Po : RF output Vd1 : Drain bias 1 Vd2 : Drain bias 2 Vg : Gate bias(positive bias) GND : Connect to GND Ext : Connect to Capacitor CASE : Connect to GND
QUALITY GRADE
GG
ES1:different pin configuration
Block Diagram of this IC and Application Circuit Example.
Regulator Battery VDD2 VDD1
VD1
VSS
Negative voltage generator
Pout
VD2 Matching circuit
Matching circuit HPA
Pin
MGF7170AC
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC (1/16)
Aug. '97
MITSUBISHI SEMICONDUCTOR
Preliminary information
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg.C )
Symbol Vd1,Vd2 Vg Pi Tc(op) Tstg Parameter Drain supply voltage Gate supply voltage Input power Operating case temperature Storage temperature Ratings 6 4 15 -30 ~ +85 -30 ~ +100 Unit V V dBm deg.C deg.C
*1.Each maximum rating is guaranteed independently.
ELECTRICAL CHARACTERISTICS (Ta=25
Symbol f Parameter frequency
deg.C ) Limits MIN TYP MAX 1715 Unit
Test conditions
-
450 480
1780 MHz
ACP<-42dBc (1.25MHz off-set.) Vd1=Vd2=3.0V ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
- - - - - - -
- - - - - - - -
-30 3 mA
Idt
Total drain current
ACP<-46dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.3V
520
450
Idle_Id Pout Ig 2sp rin
Idle current Output power Gate current 2nd harmonics input VSWR Damage with-standing Note Stability Note
Vg=2.6V, Po=28dBm Vg=2.9V, Po=12dBm
150 50 28 10
mA dBm mA dBc
Vd1=Vd2=3.0V,Vg=2.6V, Pin=7dBm CDMA modulated signal based on IS-95 STD. (1.2288Mbps spreading,OQPSK)
- - -
- -
-
-
Vd1=Vd2=3.0V, Pin=7dBm, Load VSWR=10, All phase Time=10 sec Vd1=Vd2=3.0V, Pin=7dBm, Load VSWR=3:1, All phase
No damage
-
No oscillation Spurious level -60dBc
*CDMA is code division multiple Access. OQPSK is modulation method, off-set quadrature phase shift keying. Electrical characteristics are changed by the external matching circuit. Limits are guaranteed by using MITSUBISHI test fixture. Note : Sampling inspection
MITSUBISHI ELECTRIC (2/16)
Aug. '97
MITSUBISHI SEMICONDUCTOR
Preliminary information Pin vs. Pout,Id for CDMA
35 30 25 Pout 20
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
1400 1200 1000 Idt 800 Id2 600 400 Id1 200 0 -8 -4 0 4 8 12 16 Pin (dBm)
15 10 5 0 -12
Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation
Pin vs. Pout,Efficiency for CDMA
35 30 25 20 15 10 5 0 -12 Pout 70 60 50 40 30 20 10 Fin=1750MHz 0 -8 -4 0 4 8 12 16 Pin (dBm) Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation
Efficiency
MITSUBISHI ELECTRIC (3/16)
Aug. '97
MITSUBISHI SEMICONDUCTOR
Preliminary information
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
Pin vs.Pout,Gain for CDMA
35 30 25 Gain 20 15 10 5 0 -12 20 15 10 5 0 -8 -4 0 4 8 12 16 Pin (dBm) Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation Pout 35 30 25
Pin vs. Pout,ACPR for CDMA
35 30 25 20 -15 15 10 5 0 -12 -25 ACPR -35 -45 -8 -4 0 4 8 12 16 Pin (dBm) Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation Pout -5 15 5
MITSUBISHI ELECTRIC (4/16)
Aug '97
MITSUBISHI SEMICONDUCTOR
Preliminary information
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
Spectral Plot of CDMA
ACPR=-30.57dBc
Harmonics
2SP=-39.77dBc 3SP=-32.20dBc
Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V Pout=28dBm CDMA evaluation
Aug. '97
MITSUBISHI ELECTRIC (5/16)
MITSUBISHI SEMICONDUCTOR
Preliminary information
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
Vd dependence of Pin vs.Pout,Idt
35 30 25 20 15 10 5 0 -12 Idt Pout 1400 1200 1000 800 600 400 200 0 -8 -4 0 4 8 12 16 Pin (dBm) Vd=2.6V Vd=3.0V Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation
Vd dependence of Pin vs.Pout,Efficiency
35 30 25 20 15 10 5 0 -12 Efficiency Pout 70 60 50 40 30 20 10 0 -8 -4 0 4 8 12 16 Pin (dBm) Vd=2.6V Vd=3.0V Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation
MITSUBISHI ELECTRIC (6/16)
Aug. '97
MITSUBISHI SEMICONDUCTOR
Preliminary information
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
Vd dependence of Pin vs.Pout,Gain
35 30 25 20 15 10 5 0 -12 Gain Pout 35 30 25 20 15 10 5 0 -8 -4 0 4 8 12 16 Pin (dBm) Vd=2.6V Vd=3.0V Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation
Vd dependence of Pin vs.Pout,ACPR
35 30 Pout 25 20 -15 15 10 5 0 -12 ACPR -25 -35 -45 -8 -4 0 4 8 12 16 Pin (dBm) Vd=2.6V Vd=3.0V Vd=3.4V Fin=1750MHz Vg=2.6V CDMA evaluation 15 5 -5
MITSUBISHI ELECTRIC (7/16)
Aug. '97
MITSUBISHI SEMICONDUCTOR
Preliminary information Vd dependence of Fin vs. Gain,Idt
30 Idt 25
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
600
400
20 Gain
200
Vd=2.6V Vd=3.0V Vd=3.4V
15 1.710 1.730 1.750 1.770 Frequency (GHz)
0 1.790
Fin=1750MHz Vg=2.6V CDMA evaluation
Vd dependence of Fin vs. Id1,Id2
150 600
Id2 100 400
50
Id1
200
Vd=2.6V Vd=3.0V Vd=3.4V
0 1.71 1.73 1.75 1.77 Frequency (GHz)
0 1.79
Fin=1750MHz Vg=2.6V CDMA evaluation
MITSUBISHI ELECTRIC (8/16)
Aug. '97
Preliminary information
MITSUBISHI SEMICONDUCTOR
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
Vd dependence of Fin vs. Gain,Efficiency
35 Efficiency 50
30
40
25
30
Vd=2.6V Vd=3.0V Vd=3.4V
Gain 20 1.710 1.730 1.750 1.770 Frequency (GHz) 20 1.790
Fin=1750MHz Vg=2.6V CDMA evaluation
Vd dependence of Fin vs. Gain,ACPR
25 -10
20
Gain
-20
15
ACPR
-30
Vd=2.6V Vd=3.0V Vd=3.4V
10 1.71 1.73 1.75 1.77 Frequency (GHz)
-40 1.79
Fin=1750MHz Vg=2.6V CDMA evaluation
MITSUBISHI ELECTRIC (9/16)
Aug. '97
MITSUBISHI SEMICONDUCTOR
Preliminary information
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
Equivalent Circuit of Test Board for CDMA(1.715-1.78GHz): ES1
l=5.5 w=1.0 Pin
l=11.0 w=1.0
2.0pF
l=2.0 w=1.0
2.5pF
MGF 7170 AC
Vd2 l=13.5 w=0.5 l=2.0 w=2.2
1000pF
8.0pF Pout l=11.0 w=1.0
5.0pF
Unit:mm SUB. data Er=4.8 H=600 um Metal T=43 um
MITSUBISHI ELECTRIC (10/16)
Aug. '97
MITSUBISHI SEMICONDUCTOR
Preliminary information
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
Test Circuit Board for CDMA(1.715-1.78GHz): ES1
2.5pF 2.0pF
Pin
18K Ohm 1000pF 1000pF 10Ohm 1000pF 45K Ohm 1000pF 5.0pF
Pout
8.0pF
Vd1
10Ohm 1000pF
Vg
Vd2
40 x 60 mm
SUB. data ER=4.8 H=600um Metal T=43um
MITSUBISHI ELECTRIC (11/16)
Aug. '97
MITSUBISHI SEMICONDUCTOR
Preliminary information
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
Vg
Pin
FET1 Matching circuits FET2
Pout
VD1
VD2
ZI(TS)
ZL(TS)
Equivalent circuit of MGF7170AC with our test board
: MGF7170AC(Ceramic package) : our test board( Er=4.8, t=0.6mm)
MITSUBISHI ELECTRIC (12/16)
Aug. '97
MITSUBISHI SEMICONDUCTOR
Preliminary information
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
Input/Output Impedance (@1.715-1.78GHz) : ES1 ZI(ES1) = 8.7 - j18.3 () f=1.715GHz 8.6 - j16.5 () f=1.75GHz 8.5 - j15.0 () f=1.78GHz ZL(ES1) = 3.8 - j1.1 () f=1.715GHz 3.5 - j0.4 () f=1.75GHz 3.3 + j 0.2() f=1.78GHz
X 1.78GHz X 1.75GHz X 1.715GHz
Conditions; Vd1=Vd2=3.0V Vg=2.6V Pout=28dBm
MITSUBISHI ELECTRIC (13/16)
Aug. '97
MITSUBISHI SEMICONDUCTOR
Preliminary information OUTLINE DRAWING
Note1
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER Unit : mm
6.1+/-0.2 5.2 0.3
1 8 2 3 4 6 5 7
4 - R0.2
0.3
2 - (2.4) 8 - (0.5) 8 - (0.4) Terminal Connection 1 2 3
RF IN (Pi) GND
4.1 2 - (0.1) 8 - (4.9)
Vd1 4 Ext 5 Vg 6 RF OUT (Po) & Vd2 7 GND 8 GND Case:GND
Note1 : 1 pin mark Note2 : The values without tolerance are typical.
MITSUBISHI ELECTRIC (14/16)
Aug. '97
MITSUBISHI SEMICONDUCTOR
Preliminary information
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
Recommended Mount Pad
2.50
4.10 0.8 4.90 0.8
Unit:mm
MITSUBISHI ELECTRIC (15/16)
Aug. '97
MITSUBISHI SEMICONDUCTOR
Preliminary information
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
Recommended Temperature Profile
1) Infrared Reflow and Air Reflow Temperature Profile
max. 10sec max. 240 deg.C 1~4 deg.C/sec 1~4 deg.C/sec
150 deg.C
Approx. 60sec
Time
Notes 1) Temperature profile on package surface 2) Reflow process : Up to three times
MITSUBISHI ELECTRIC (16/16)
Aug. '97

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